SIZ926DT-T1-GE3

Overview

The SiZ926DT is a dual N-channel 25 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an asymmetric PowerPAIR 6 x 5 package with two distinct channels. Channel-1 has a maximum RDS(on) of 4.8 mΩ at VGS = 10 V and a continuous drain current of 40 A. Channel-2 offers lower resistance at 2.2 mΩ max at VGS = 10 V, supporting up to 60 A continuous drain current. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• TrenchFET Gen IV power MOSFET architecture
• Optimized Qgs/Qgd ratio for improved switching characteristics
• 100% tested for gate resistance and unclamped inductive switching

Applications

• CPU core power
• Computer / server peripherals
• POL (Point-of-Load)
• Synchronous buck converter
• Telecom DC/DC

Procurement Notes

Verify the specific datasheet revision and document number against official Vishay sources before finalizing component selection. Confirm that the PowerPAIR leadless package soldering profile meets your manufacturing requirements, as manual rework with a soldering iron is not recommended for this leadless component design.

Selection Notes

Select based on the required channel performance; Channel-2 provides higher current capacity and lower on-resistance compared to Channel-1. Ensure the application voltage does not exceed the 25 V drain-source rating. Consider the thermal resistance limits when designing heatsinking, as steady-state junction-to-case ratings differ between the two channels.

Part Context

This component belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR leadless surface-mount package, designed for high-density PCB layouts. The device integrates two independent N-channel MOSFETs optimized for synchronous rectification and low-loss switching applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.