SIZ980BDT-T1-GE3

$1.87

Description：MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Series：TrenchFET® Gen IV

SKU:b6fad0c1818b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual), Schottky
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs：4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V, 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：790pF @ 15V, 3655pF @ 15V
Power - Max：3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair® (6x5)
Grade：-
Qualification：-

Download product information

SIZ980BDT-T1-GE3

Overview

The SiZ980BDT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 6 x 5 leadless package. Channel-1 has a maximum RDS(on) of 4.39 mΩ at VGS = 10 V and a continuous drain current of 54.8 A at TC = 25 °C. Channel-2 offers a lower RDS(on) of 1.06 mΩ at VGS = 10 V with a continuous drain current of 197 A at TC = 25 °C. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

SkyFET low side MOSFET architecture integrating a Schottky diode for enhanced efficiency
Optimized RDS(on) x Qg figure of merit to improve switching performance
Manufactured using TrenchFET Gen IV power MOSFET technology
Subjected to 100% gate resistance and single pulse avalanche testing

Applications

CPU core power regulation
Computer and server peripheral power management
Point-of-load (POL) conversion
Synchronous buck converter circuits
Telecommunications DC/DC power supplies

Procurement Notes

Verify the component against official Vishay Siliconix datasheet document number 77251 to confirm technical specifications. Ensure that the ordering suffix matches the required lead-free and halogen-free configuration. Validate package dimensions and pinout compatibility during integration. Confirm operational limits align with specific application thermal requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring high current density in a compact footprint. Channel-2 provides significantly higher current capacity compared to Channel-1, allowing asymmetric load distribution. Verify that the gate drive voltage meets the specified thresholds for optimal on-state resistance. Consider the thermal resistance characteristics when designing heatsinking solutions for steady-state operations.

Part Context

This part belongs to the SiZ series of dual N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAIR 6 x 5 leadless package, which is designed for surface mounting on FR4 boards. The integration of the Schottky diode distinguishes it from standard dual MOSFETs by providing an additional rectification path within the same package.