SIZF300DT-T1-GE3

$1.54

Description：MOSFET 2N-CH 30V 23A 8POWERPAIR
Series：TrenchFET® Gen IV

SKU:00f01eccea0d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 23A 8POWERPAIR
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs：4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 15V, 3150pF @ 15V
Power - Max：3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair® (6x5)
Grade：-
Qualification：-

Download product information

SIZF300DT-T1-GE3

Overview

The SIZF300DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features an internally connected half-bridge configuration within a 3.3 mm-by-3.3 mm PowerPAIR 3 x 3F footprint. Channel-1 has a maximum RDS(on) of 4.5 mΩ at VGS = 10 V and a continuous drain current of 75 A. Channel-2 offers a lower RDS(on) of 1.84 mΩ at VGS = 10 V with a continuous drain current of 141 A. The device supports gate-source voltages up to +20 V and -16 V for Channel-1, and +16 V and -12 V for Channel-2.

Feature Summary

TrenchFET Gen IV power MOSFET technology
SkyFET low side MOSFET with integrated Schottky diode
Internally connected half-bridge configuration
100% Rg and UIS tested

Applications

CPU core power
Computer / server peripherals
POL
Synchronous buck converter
Telecom DC/DC

Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance before procurement. Confirm package type matches the PowerPAIR 3 x 3F specification. Ensure the component meets RoHS directives as defined by Vishay Semiconductors. Cross-reference the datasheet revision date against manufacturing lot codes to ensure consistency with design requirements.

Selection Notes

Select this component when a compact dual N-channel solution with an integrated Schottky diode is required. The asymmetric channel characteristics allow optimization for different sides of a half-bridge circuit. Verify that the 30 V drain-source voltage rating aligns with the system's operating voltage. Consider the thermal resistance values for heatsinking requirements in synchronous buck applications.

Part Context

This part belongs to the SiZF series from Vishay Siliconix, designed for high-efficiency power switching. The PowerPAIR package provides a small form factor suitable for dense PCB layouts. The integration of the Schottky diode reduces external component count compared to discrete solutions.