SIZF360DT-T1-GE3

$1.83

Description：MOSFET 2N-CH 30V 23A 6POWERPAIR
Series：TrenchFET® Gen IV

SKU:b388e2bd891b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 23A 6POWERPAIR
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual), Schottky
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs：4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 15V, 3150pF @ 15V
Power - Max：3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-PowerPair™
Supplier Device Package：6-PowerPair™
Grade：-
Qualification：-

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SIZF360DT-T1-GE3

Overview

The SiZF360DT is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features a SkyFET low-side configuration in a 3.3 mm-by-3.3 mm PowerPAIR 3 x 3FDC package. Channel-1 has a maximum RDS(on) of 4.5 mΩ at VGS = 10 V and a continuous drain current of 83 A. Channel-2 offers a lower RDS(on) of 1.9 mΩ at VGS = 10 V with a continuous drain current of 143 A. The device includes double-cooled thermal features for enhanced heat transfer.

Feature Summary

Integrates a Schottky diode within the dual N-channel MOSFET structure
Features TrenchFET Gen IV power MOSFET technology
Provides double cooled capability for improved thermal dissipation
Includes internal half-bridge configuration in a compact footprint

Applications

CPU core power
Computer / server peripherals
POL (Point-of-Load)
Synchronous buck converter
Telecom DC/DC

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm compliance with RoHS and halogen-free requirements as stated in the ordering information. Ensure that the PowerPAIR 3 x 3FDC leadless package handling procedures are followed during assembly to maintain solder joint integrity.

Selection Notes

Select this component when a low-side synchronous rectifier with an integrated body diode replacement is required. Consider the asymmetric channel characteristics where Channel-2 provides significantly lower on-resistance and higher current capacity than Channel-1. Evaluate the thermal resistance ratings against the specific application's cooling strategy.

Part Context

This part belongs to Vishay Siliconix's SiZF series, which combines MOSFETs with Schottky diodes. It utilizes the PowerPAIR 3 x 3FDC leadless package designed for high-current applications. The device is manufactured using silicon technology and is intended for surface-mount installation.