SIZF5300DT-T1-GE3

$2.38

Description：MOSFET 2N-CH 30V 35A PWRPAIR
Series：TrenchFET® Gen V

SKU:9a87dbd22ebe Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 35A PWRPAIR
Series：TrenchFET® Gen V
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：35A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs：2.43mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1480pF @ 15V
Power - Max：4.5W (Ta), 56.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：12-PowerPair™
Supplier Device Package：PowerPAIR® 3x3FS
Grade：-
Qualification：-

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SIZF5300DT-T1-GE3

Overview

The SIZF5300DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET® Gen V technology. It features symmetric high-side and low-side MOSFETs in a PowerPAIR® 3 x 3FS package. The device offers a maximum on-state resistance of 2.43 mΩ at VGS = 10 V and 3.51 mΩ at VGS = 4.5 V. Typical gate charge is 9.5 nC at VGS = 4.5 V. Continuous drain current reaches 125 A at TC = 25 °C. Maximum power dissipation is 56.8 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

Symmetric dual n-channel configuration optimized for 50% duty cycle applications
Flip chip technology provides optimal thermal design and enhanced heat dissipation
Optimized RDS(on)-Qg and RDS(on)-Qgd figure of merit elevates efficiency for high frequency switching
100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)

Applications

Synchronous buck converters
Computer and server peripherals
Half bridge circuits
Point of load (POL) conversion
Telecom DC/DC modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free status. Confirm that the UE3 variant meets project needs if BLR and IOL specifications are required. Always validate component authenticity through authorized channels before integration into production systems.

Selection Notes

Select this component when space-constrained designs require a symmetric dual MOSFET solution. The PowerPAIR® 3 x 3FS package reduces PCB area compared to discrete devices. Ensure the application operates within the specified VGS limits of +16 V and -12 V. Verify thermal management capabilities align with the junction-to-case thermal resistance ratings for the intended duty cycle.

Part Context

This part belongs to the SiZF5300DT series, representing Vishay's TrenchFET® Gen V generation. It is designed as a compact alternative to discrete MOSFET pairs or larger dual packages like the PowerPAIR 6x5F. The flip-chip construction differentiates it from traditional wire-bonded counterparts, offering improved electrical performance and thermal characteristics.