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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 41A PWRPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：41A (Ta), 159A (Tc)
- Rds On (Max) @ Id, Vgs：1.37mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：106nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5750pF @ 20V
- Power - Max：4.2W (Ta), 62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerDFN
- Supplier Device Package：PowerPAIR® 6x5FS
- Grade：-
- Qualification：-
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Overview
The SIZF640DT-T1-GE3 is a symmetric dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology and flip-chip packaging. It features a 40 V drain-source voltage rating and a maximum on-resistance of 1.37 mΩ at VGS = 10 V. The device supports a continuous drain current of up to 159 A at TC = 25 °C and operates within a junction temperature range of -55 °C to +150 °C. Packaged in the leadless PowerPAIR 6 x 5FS format, it integrates high-side and low-side MOSFETs optimized for 50% duty cycle applications.
Feature Summary
- Symmetric dual N-channel configuration with optimized high-side and low-side combination
- Flip-chip technology providing optimal thermal design and low thermal resistance
- TrenchFET Gen IV power MOSFET architecture ensuring robust performance
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Applications
- Buck-boost converters
- Half-bridge synchronous rectification
- Telecom DC/DC conversion
- Motor drive control
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number SIZF640DT-T1-GE3 with official Vishay documentation. Confirm package type is PowerPAIR 6 x 5FS and ensure compliance with RoHS and halogen-free material standards. Validate technical specifications against the latest datasheet revision before integration into designs.
Selection Notes
Select this component for applications requiring low on-resistance and high current handling in a compact footprint. The symmetric dual channel design simplifies circuit topology for half-bridge and buck-boost topologies. Ensure adequate thermal management is considered, as the device relies on surface mounting for heat dissipation to achieve rated current capabilities.
Part Context
This part belongs to the SiZF640DT series of symmetric dual N-channel MOSFETs. It utilizes Vishay's proprietary TrenchFET Gen IV technology to minimize conduction losses. The PowerPAIR 6 x 5FS package offers a leadless design that enhances thermal performance compared to traditional packages, making it suitable for high-density power electronics.
Replacement Considerations
Direct substitutes must match the 40V rating, dual N-channel configuration, and PowerPAIR 6x5FS package. Verify equivalent RDS(on), Qg, and thermal resistance values. Consult Vishay documentation for recommended alternatives if specific pinout or electrical parameters differ.
