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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 23.5A 8PWRPAIR
- Series：PowerPAIR®, TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V, 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1050pF @ 10V, 4670pF @ 10V
- Power - Max：3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SIZF914DT-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. It features asymmetric channel configurations within a PowerPAIR 6x5F leadless package. Channel-1 has a maximum on-resistance of 0.0038 Ω at VGS=10V and a continuous drain current of 40 A (TC=25°C). Channel-2 offers lower resistance at 0.0009 Ω max at VGS=10V with a continuous drain current of 60 A (TC=25°C). Both channels support a drain-source voltage of 25 V and operate within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- SkyFET low-side MOSFET architecture with integrated Schottky diode for synchronous rectification
- G1 return/S1 pin configuration designed to enhance high-side driving performance
- TrenchFET Gen IV power MOSFET technology ensuring robust switching characteristics
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecom DC/DC power supplies
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm package type and environmental compliance. The datasheet indicates the standard part is lead-free and halogen-free. Confirm availability status directly with authorized distributors as manufacturing schedules may change. Ensure the component meets RoHS requirements for the intended assembly process.
Selection Notes
Select this component for applications requiring asymmetric current handling in dual-channel topologies. Channel-2 provides higher current capacity and lower on-resistance compared to Channel-1. Verify gate drive voltages align with the specified thresholds for optimal RDS(on) performance. Consider thermal dissipation limits based on the specific PCB copper area and ambient conditions.
Part Context
This device belongs to the SiZF series of dual N-channel MOSFETs with integrated Schottky diodes. It utilizes Vishay's SkyFET technology and is housed in the PowerPAIR 6x5F leadless package. The product is manufactured by Vishay Siliconix and is documented under datasheet number 75978.
Replacement Considerations
No direct public substitute part numbers are confirmed in the provided documentation. Evaluate alternative dual N-channel MOSFETs with integrated Schottky diodes only if they match the 25 V rating, PowerPAIR 6x5F footprint, and thermal characteristics.
