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Product Detailed Parameters
- Description：DUAL N-CHANNEL 30 V (D-S) MOSFET
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc)
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V, 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1290pF @ 15V, 3350pF @ 15V
- Power - Max：3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SIZF918BDT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. Channel-1 features a maximum RDS(on) of 3.3 mΩ at VGS = 10 V and a continuous drain current of 73 A. Channel-2 offers a lower RDS(on) of 1.4 mΩ at VGS = 10 V with a continuous drain current of 158 A. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAIR 6 x 5F package.
Feature Summary
- SkyFET low side MOSFET architecture with an integrated Schottky diode for enhanced switching performance.
- Manufactured using TrenchFET Gen IV power MOSFET technology to minimize conduction losses.
- Subjected to 100% gate resistance and single pulse avalanche testing to ensure reliability.
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecom DC/DC power supplies
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. Ensure that the PowerPAIR 6 x 5F package handling guidelines are followed during assembly, as manual soldering with an iron is not recommended for this leadless component type.
Selection Notes
Select based on the required channel configuration, noting the distinct electrical characteristics between Channel-1 and Channel-2. Evaluate thermal resistance ratings relative to the intended heatsinking strategy. Confirm that the gate-source voltage limits align with the driving circuit capabilities.
Part Context
This component belongs to the SiZF918BDT series from Vishay Siliconix. It is designed specifically for high-efficiency power conversion applications requiring compact form factors and robust switching characteristics in server and telecom environments.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided datasheet.
FAQ
What is the maximum gate-source voltage rating for each channel?
Channel-1 supports a maximum gate-source voltage of +20 V and -16 V. Channel-2 supports a maximum gate-source voltage of +16 V and -12 V.
Is the device suitable for surface mounting?
Yes, the SIZF918BDT-T1-GE3 is designed for surface mount technology (SMD/SMT) installation using the PowerPAIR 6 x 5F package.
How does the integrated Schottky diode function?
The integrated Schottky diode is associated with Channel-2, providing a low-loss path for reverse current and improving overall efficiency in synchronous rectification applications.
