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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 23A 8POWERPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual), Schottky
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs：4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA, 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 15V, 2650pF @ 15V
- Power - Max：3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (6x5)
- Grade：-
- Qualification：-
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Overview
The SIZF918DT-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology. Channel-1 features a maximum RDS(on) of 4.0 mΩ at VGS = 10 V and a continuous drain current of 40 A. Channel-2 offers a lower RDS(on) of 1.9 mΩ at VGS = 10 V with a continuous drain current of 60 A. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAIR 6 x 5F package.
Feature Summary
- SkyFET low-side MOSFET architecture with an integrated Schottky diode for enhanced switching performance.
- Asymmetric dual-channel configuration providing optimized on-resistance and current handling capabilities.
- Guaranteed 100% gate resistance and unclamped inductive switching (UIS) testing for reliability.
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecommunications DC/DC power supplies
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance attributes such as halogen-free status and RoHS directives. Ensure that the PowerPAIR 6 x 5F package dimensions align with the target PCB land pattern requirements before finalizing procurement specifications.
Selection Notes
Select this component when designing asymmetric dual-channel power stages requiring distinct current ratings per channel. The integrated Schottky diode eliminates the need for external body-diode replacements, reducing component count. Validate thermal dissipation limits based on the specific junction-to-case resistance values provided in the datasheet for the intended application load.
Part Context
This part belongs to the SiZF series of Vishay Siliconix power MOSFETs. It utilizes the SkyFET technology platform, which integrates a Schottky barrier rectifier directly onto the die to improve reverse recovery characteristics compared to standard body diodes.
Replacement Considerations
Direct replacement requires verifying pinout compatibility and thermal resistance characteristics. Alternative dual N-channel MOSFETs must be evaluated for matching RDS(on) asymmetry and integrated diode voltage drop specifications to ensure circuit stability.
