SKB02N60E3266ATMA1

$0.55

Description：IGBT NPT 600V 6A TO263-3-2
Series：-

SKU:462db2558835 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 6A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：6:00 AM
Current - Collector Pulsed (Icm)：12:00 AM
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 2A
Power - Max：30 W
Switching Energy：64µJ
Input Type：Standard
Gate Charge：14 nC
Td (on/off) @ 25°C：20ns/259ns
Test Condition：400V, 2A, 118Ohm, 15V
Reverse Recovery Time (trr)：130 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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SKB02N60E3266ATMA1

Overview

SKB02N60 is a fast NPT-technology IGBT with an integrated anti-parallel Emitter Controlled Diode. It features a collector-emitter voltage of 600V and a DC collector current of 6.0A at 25°C. The saturation voltage is 2.2V, and the junction temperature range extends to 150°C. Short circuit withstand time is rated at 10µs. The device utilizes PG-TO-263-3-2 packaging.

Feature Summary

NPT technology ensures tight parameter distribution and parallel switching capability.
Soft, fast recovery anti-parallel diode reduces switching noise.
Optimized for low turn-off energy losses combined with low conduction losses.

Applications

Frequency inverters for washing machines
Fan motor drives
Pump control systems
Vacuum cleaner motors

Procurement Notes

Verify component authenticity through authorized Infineon distributors or official channels. Confirm datasheet revision matches Rev 2.3 dated 12.06.2013. Ensure compliance with RoHS standards and lead-free plating specifications required for target applications.

Selection Notes

Select based on 600V blocking capability and 6.0A continuous current rating at 25°C case temperature. Consider thermal resistance values for heat sink design. Evaluate gate drive requirements against specified threshold voltages and short circuit robustness limits.

Part Context

This component belongs to Infineon's SKB series of insulated gate bipolar transistors. It is designed specifically for high-frequency inverter applications requiring rugged operation and stable thermal behavior under varying load conditions.