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The SKW20N60HSFKSA1 is a high-speed N-channel IGBT in NPT-technology with an integrated anti-parallel diode, housed in a PG-TO-247-3 package. It features a collector-emitter voltage of 600 V and a DC collector current of 20 A at 100°C (36 A at 25°C). The device offers a short-circuit withstand time of 10 µs and is designed for operation above 30 kHz. Key electrical parameters include a turn-off energy of 240 µJ, a saturation voltage of 2.8 V to 4.0 V, and a gate charge of 100 nC.
Verify the specific ordering suffix 'FKSA1' against official Infineon documentation to confirm exact packaging and reel specifications. Ensure the component matches the PG-TO-247-3 footprint and thermal requirements. Confirm RoHS compliance status and JEDEC qualification alignment with target application standards before finalizing procurement.
Select this component for applications requiring high switching speeds above 30 kHz and robust short-circuit protection. The NPT technology ensures stable behavior across temperature ranges and facilitates parallel operation. Evaluate thermal resistance values and ensure adequate heat sinking for the specified current ratings at elevated junction temperatures.
This part belongs to Infineon's SKW series of high-speed IGBTs utilizing NPT technology. It is engineered for demanding power conversion tasks where efficiency and switching speed are critical. The series is characterized by low turn-off energy and high ruggedness, making it suitable for industrial and automotive power electronics.
SKW20N60HSF