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Product Detailed Parameters
- Description：MOSFET 3N/3P-CH 55V 8A 15ZIP
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：3 N and 3 P-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：15-SIP Exposed Tab, Formed Leads
- Supplier Device Package：15-ZIP
- Grade：-
- Qualification：-
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Overview
The SLA5096 is a transistor and MOS FET array manufactured by Sanken Electric USA Inc. It features six internal circuits within a SIP15 with Fin (SLA15Pin) package. The device operates in enhancement mode using metal-oxide semiconductor technology. Key electrical parameters include a maximum drain-source breakdown voltage of 55 V, a maximum continuous drain current of 8 A, and a maximum drain-source on-resistance of 0.08 Ω. The component is lead-free, RoHS compliant, and designed for flange mount installation.
Feature Summary
- Integrates six discrete circuits into a single complex array configuration
- Utilizes N-channel metal-oxide semiconductor technology for power switching
- Features a flange mount plastic/epoxy package with an integrated heat dissipation fin
Applications
- Motor driver circuits
- Power switching applications
- Industrial control systems
Procurement Notes
Verify the specific datasheet version when sourcing to ensure compatibility with the required thermal and electrical specifications. Confirm that the SIP15 with Fin package dimensions match the target PCB layout and mounting hardware requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact solution requiring multiple switched channels is necessary. The integrated fin design supports efficient thermal management for high-current applications. Ensure the system voltage does not exceed the 55 V breakdown rating and that the load current remains within the 8 A limit.
Part Context
This part belongs to the SLA series of transistor and MOS FET arrays produced by Sanken Electric. These components are engineered for robust performance in power electronics, offering a consolidated alternative to assembling individual discrete transistors for multi-channel drive requirements.
Replacement Considerations
The SLA5212 serves as a direct functional substitute within the same product family. Both devices share identical packaging, circuit counts, and pin configurations, allowing for potential interchangeability in existing designs without physical modifications.
