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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.2A SMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 10V
- Power - Max：300mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：SMT6
- Grade：-
- Qualification：-
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Overview
The SM6K2T110 is a dual N-channel MOSFET array manufactured by ROHM Semiconductor. It features a source-drain voltage rating of 60V and a continuous drain current of 200mA. The device operates with a logic-level gate drive and has a maximum power dissipation of 300mW. It utilizes surface-mount technology in an SMT6 package, suitable for compact electronic designs requiring efficient switching capabilities within specified thermal limits.
Feature Summary
- Dual N-channel configuration for integrated circuit applications
- Logic-level gate drive capability for direct interface with control signals
- Surface-mount construction optimized for automated assembly processes
Applications
- General-purpose signal switching circuits
- Low-power load management systems
- Consumer electronics internal control interfaces
Procurement Notes
Verify the specific datasheet version and ordering suffixes to ensure compatibility with required packaging and tape-and-reel specifications. Confirm that the intended application environment remains within the stated temperature and voltage ratings to maintain device reliability and performance standards.
Selection Notes
Select this component when a dual N-channel solution is required for low-current switching tasks. Ensure the design accommodates the 300mW power dissipation limit and verify that the 60V breakdown voltage aligns with the system's operational requirements without exceeding safe operating areas.
Part Context
This part belongs to ROHM's discrete semiconductor portfolio, specifically focusing on MOSFET arrays. These components are designed for general-purpose applications rather than automotive use, emphasizing reliability and quality consistent with industrial and consumer electronics standards.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer channels or authorized distributors for verified cross-reference data before implementing alternative components.
