SMA5113

$7.20

Description：MOSFET 4N-CH 450V 7A 12SIP
Series：-

SKU:ae2ac065540c Category: FET, MOSFET Arrays Brand: Sanken Electric USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 450V 7A 12SIP
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：4 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：450V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Rds On (Max) @ Id, Vgs：1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：720pF @ 10V
Power - Max：4W (Ta), 35W (Tc)
Operating Temperature：150°C
Mounting Type：Through Hole
Package / Case：12-SIP
Supplier Device Package：12-SIP
Grade：-
Qualification：-

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SMA5113

Overview

The SMA5113 is a MOS FET Array manufactured by Sanken Electric USA Inc. It integrates six N-channel enhancement mode power MOSFETs within a single package. The device features a drain-source breakdown voltage of 450 V and a continuous drain current rating of 4 A at 25°C ambient temperature, rising to 35 A at 25°C case temperature with an infinite heatsink. Key electrical parameters include a maximum gate-source voltage of ±30 V, a typical on-resistance (RDS(on)) of 0.84 Ω at VGS = 10 V and ID = 3.5 A, and a threshold voltage ranging from 2.0 V to 5.0 V. The component utilizes a 12-pin SIP LF1000 package.

Feature Summary

Integrates six independent N-channel MOSFET circuits for compact multi-phase or bridge configurations
High-voltage capability suitable for demanding power switching applications
Robust avalanche energy rating for inductive load protection

Applications

Switching power supplies
Motor drive circuits
Inverter topologies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status prior to integration. Check for availability as the component may be subject to supply constraints. Validate that the selected variant matches the required package style for PCB layout compatibility.

Selection Notes

Evaluate the thermal resistance values provided in the datasheet to determine adequate heatsinking requirements for the intended operating environment. Ensure the gate drive voltage meets the minimum threshold for full enhancement while staying within absolute maximum ratings. Consider the parasitic capacitances for high-frequency switching performance analysis.

Part Context

This component belongs to the SMA series of MOS FET Arrays produced by Sanken Electric. These devices are designed to provide multiple power switching channels in a single footprint, reducing board space compared to discrete solutions. The SMA5113 specifically targets applications requiring high voltage isolation and moderate current handling capabilities.