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The SMA5125 is a dual MOSFET module integrating one N-channel and one P-channel power transistor within a single SMA package. The N-channel device supports a drain-source voltage of 60 V, continuous current of 10 A, and on-resistance of 0.14 Ω at 4 V gate drive. The P-channel counterpart provides -60 V breakdown, -10 A continuous current, and 0.14 Ω resistance at -10 V gate drive. Thermal performance includes a junction-to-case resistance of 4.166 °C/W and a maximum operating junction temperature of 150 °C.
Verify the specific ordering suffix against official Sanken Electric documentation to confirm pin configuration and internal circuit topology. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the SMA footprint aligns with your PCB layout standards before finalizing procurement.
Select this component when space constraints require a matched pair of N-channel and P-channel devices. Verify that the 60 V rating exceeds the maximum circuit voltage including transients. Check that the gate drive voltage levels are compatible with the specified RDS(on) thresholds for both channels.
This part belongs to the SMA series of dual MOSFET modules manufactured by Sanken Electric USA Inc. It is designed as a compact solution for replacing discrete pairs of transistors in power conversion topologies where symmetry and thermal matching between N-channel and P-channel devices are critical.
Check for alternative SMA-series dual MOSFETs from Sanken Electric or other manufacturers offering similar 60 V ratings and package dimensions. Verify pinout compatibility and electrical parameter equivalence before substitution.