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The SMMA511DJ-T1-GE3 is a Vishay Siliconix dual MOSFET containing N- and P-channel vertical DMOS transistors in a PowerPAK SC-70-6 package. It features a 12 V drain-source voltage rating and a continuous drain current of 4.5 A at TC = 25 °C. The on-resistance (RDS(on)) is 0.040 Ω for the N-channel and 0.070 Ω for the P-channel at VGS = ± 4.5 V. Operating junction temperatures range from -55 °C to +150 °C, with maximum power dissipation reaching 6.5 W at TC = 25 °C.
Verify component authenticity by checking the manufacturer's official datasheet and ordering information. Ensure the specific suffix matches the required lead-free and halogen-free specifications. Confirm that the device meets the necessary medical manufacturing standards before procurement.
Select this component when a compact dual N- and P-channel configuration is required for low-voltage switching. The 12 V rating and 4.5 A current capability suit portable and implantable loads. Evaluate thermal resistance ratings against the expected ambient temperature and duty cycle constraints.
This part belongs to the TrenchFET family utilizing advanced vertical DMOS technology. It is housed in the PowerPAK SC-70-6L dual pad package, which provides a highly efficient thermal path. The design supports both linear and switching applications across a wide temperature range.
Consult the manufacturer's documentation for verified alternative part numbers. Ensure any substitute maintains identical pinout configurations, voltage ratings, and thermal characteristics suitable for medical implant environments.
The maximum operating junction temperature is +150 °C.
Yes, the manufacturing process is halogen-free according to IEC 61249-2-21 definition.
The absolute maximum gate-source voltage rating is ± 8 V.