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The SMMB911DK-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a thermally enhanced PowerPAK SC-75 package. It features a drain-source voltage of -20 V and continuous drain currents up to -2.6 A at TC = 25 °C. The device offers low on-state resistance, with typical values of 0.295 Ω at VGS = -4.5 V, 0.420 Ω at VGS = -2.5 V, and 0.560 Ω at VGS = -1.8 V. Operating junction temperatures range from -55 °C to +150 °C, and the component is compliant with RoHS directives.
Verify the specific ordering suffix to confirm the reel quantity and tape specifications required for your assembly line. Confirm that the lead-free and halogen-free status aligns with your environmental compliance standards. Ensure the PowerPAK SC-75 package dimensions match your PCB footprint requirements before finalizing procurement.
Select this component when a dual P-channel switch is needed in a minimal surface area. Evaluate the thermal resistance ratings against your expected power dissipation and ambient temperature conditions. Consider the gate charge and threshold voltage characteristics to ensure compatibility with your logic-level drive signals and switching frequency requirements.
This part belongs to the SMMB series of dual MOSFETs designed for space-constrained applications. It utilizes Vishay's TrenchFET technology to achieve low on-resistance in a small outline package. The PowerPAK SC-75 package provides improved thermal performance compared to standard SC-75 footprints while maintaining a small board area.
Direct pin-to-pin replacements should be verified against the datasheet parameters. Check for equivalent drain-source voltage, current ratings, and on-resistance values. Ensure the replacement package matches the PowerPAK SC-75 dimensions and thermal characteristics.