SMMBFJ310LT1G

Overview

The SMMBFJ310LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for RF and low-noise amplifier applications, housed in a compact SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 25 V and a gate-source breakdown voltage of 25 V. It operates with a test current of 10 mA at a test voltage of 10 V, providing a typical gain of 12 dB. The continuous drain current ranges from 60 mA, with the zero-gate-voltage drain current specified between 24 mA and 60 mA.

Feature Summary

• Utilizes silicon JFET technology for stable RF performance
• Optimized for low-noise signal amplification
• Compact SOT-23-3 packaging for space-constrained designs

Applications

• RF front-end stages
• Low-noise amplifiers
• Signal conditioning circuits

Procurement Notes

Verify the specific ordering suffix to confirm the tape-and-reel quantity and packaging configuration. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets before finalizing procurement plans.

Selection Notes

Select this component when a small-form-factor N-channel JFET is required for RF applications. Ensure the circuit design accommodates the 25 V breakdown limits and the specific transconductance characteristics defined in the official electrical specifications.

Part Context

This part belongs to the MMBFJ310L series of RF JFETs. It shares core electrical characteristics with the MMBFJ310LT3G but differs in packaging format. Both are single N-channel devices intended for similar high-frequency analog applications.

Replacement Considerations

The MMBFJ310LT3G is a verified alternative within the same product family. Verify pinout compatibility and ensure the replacement meets the required RF gain and noise figure specifications.