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The InterFET SMP4416A is an N-channel Junction Field-Effect Transistor (JFET) housed in a surface-mount SOT23 package. It utilizes the proprietary InterFET N0026S geometry to deliver low noise and leakage characteristics. The device features a gate-to-source breakdown voltage of -35 V, a drain-to-source saturation current of 5 mA, and a forward transconductance of 4500 µS. Designed for sensitive RF applications, it operates within a junction temperature range of -55°C to 125°C.
Verify that the specific ordering suffix matches the required packaging format, such as bulk or tape and reel quantities. Confirm RoHS compliance status if environmental regulations apply to the end application. Ensure the selected variant meets the necessary electrical specifications for the target circuit design before finalizing procurement.
Select the SMP4416A when a surface-mount N-channel JFET with high breakdown voltage and low noise is required. The 'A' variant offers a higher gate-to-source breakdown voltage compared to standard versions. Consider the SOT23 footprint for compact PCB layouts requiring hermetic-free assembly while maintaining RF performance metrics.
This component belongs to the 2N4416 series of N-channel silicon junction FETs manufactured by InterFET. The series includes through-hole and bare die options alongside the surface-mount SMP4416A. These devices are engineered for high-frequency analog signal processing tasks where low distortion and minimal noise figure are critical operational requirements.
Cross-reference with PN4416A for equivalent pinout and functional characteristics. Verify that substitute components maintain the same SOT23 package dimensions and meet the minimum -35 V breakdown voltage requirement for direct replacement in existing designs.