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Product Detailed Parameters
- Description：JFET P-Channel 40V Low Ciss
- Series：SMP5460
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 15V
- Resistance - RDS(On)：650 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The SMP5460TR is a P-Channel Silicon Junction Field-Effect Transistor manufactured by InterFET. It utilizes the InterFET P0032F geometry and is housed in an SOT23 surface-mount package. The device is supplied in tape and reel configurations, with maximum quantities of 3,000 pieces for 7-inch reels and 9,000 pieces for 13-inch reels. Key electrical parameters include a Gate to Source Breakdown Voltage (BV_GSS) of 40V, a Drain to Source Saturation Current (I_DSS) range of -1mA to -5mA, and a Gate to Source Cutoff Voltage (V_GS(off)) between 0.75V and 6V. Forward transconductance (G_FS) ranges from 1000μS to 4000μS.
Feature Summary
- Utilizes InterFET P0032F geometry for optimized performance
- Features low input capacitance typically at 3.2pF
- Designed for sensitive amplifier stages in mid-frequency applications
- RoHS compliant construction
Applications
- Audio Amplifiers
- General Purpose Amplifiers
- Sensitive Amplifier Stages
Procurement Notes
Verify that the specific order matches the SMP5460TR designation to ensure the correct P-Channel variant and SOT23 surface-mount packaging. Confirm the required tape and reel size, as options are available for 7-inch reels up to 3,000 pieces or 13-inch reels up to 9,000 pieces. Ensure design validation covers all field use cases and extreme conditions as per manufacturer guidelines.
Selection Notes
Select this component when a P-Channel JFET with a 40V breakdown voltage and low input capacitance is required for mid-frequency designs. The SMP5460TR offers a specific I_DSS range of -1mA to -5mA and V_GS(off) of 0.75V to 6V. Consider the SOT23 package for surface-mount assembly needs. Compare against SMP5461TR or SMP5462TR if different saturation current or transconductance characteristics are necessary for the circuit.
Part Context
The SMP5460TR belongs to the 2N5460 series of P-Channel JFETs produced by InterFET. This family includes variants such as the through-hole TO-92 versions and other binning options like the SMP5461 and SMP5462. These devices share the same core P0032F geometry but differ in electrical parameter bins, allowing designers to select specific gain and current characteristics while maintaining consistent physical footprint options.
Replacement Considerations
Direct replacements within the same InterFET lineup include the SMP5461TR and SMP5462TR, which offer different I_DSS and G_FS bins. For equivalent specifications in alternative packages, the through-hole 2N5460 may be considered if board layout permits.
