SMPJ110TR

Overview

The InterFET SMPJ110TR is an N-Channel JFET in a SOT23 surface-mount package. It features a Gate to Source Breakdown Voltage of -25V and a Drain to Source Saturation Current of 10mA. The device exhibits low noise with a typical value of 1 nV/√Hz and high gain at 100mS typical. Static characteristics include a Gate to Source Cutoff Voltage of -0.5V and Drain to Source ON Resistance ranging from 18Ω to 25Ω. Dynamic parameters specify input capacitance of 15pF and power dissipation of 360mW.

Feature Summary

• Utilizes InterFET N0450S geometry for optimized performance
• Designed for high gain and low noise switching applications
• RoHS compliant construction

Applications

• Chopper circuits
• Commutator systems
• Analog switches

Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging containing up to 3,000 pieces on a 7-inch reel or up to 9,000 pieces on a 13-inch reel. Confirm the minimum order quantity is 1,000 pieces as specified for this packaging format. Ensure the component matches the J110 electrical specifications rather than the J110A variant if strict parameter adherence is required.

Selection Notes

Select this component for designs requiring low noise amplification and high transconductance in a compact SOT23 footprint. The -25V breakdown voltage supports standard low-voltage signal processing tasks. Consider the 18Ω to 25Ω on-resistance range when calculating signal path losses. Verify thermal management capabilities against the 360mW power dissipation limit for the intended operating environment.

Part Context

This part belongs to the InterFET J110 series of N-Channel Junction Field Effect Transistors. It shares core electrical characteristics with the through-hole TO-92 J110 but utilizes a surface-mount SOT23 case. The 'TR' suffix denotes the specific tape and reel packaging configuration available for automated assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source documentation.