SMS7621-060

RF Diode Overview

The SMS7621-060 is a surface-mount, low-barrier silicon Schottky diode in an ultra-miniature 0201 package. It features a maximum reverse voltage of 2 V and a forward current rating of 50 mA with 75 mW power dissipation. Electrical specifications include a minimum breakdown voltage of 2 V at 10 μA reverse current, a maximum total capacitance of 0.18 pF at 0 V and 1 MHz, and a maximum series resistance of 12 Ω. The forward voltage ranges from 260 to 320 mV at 1 mA forward current. Operating temperature spans -65°C to +150°C.

RF Diode Feature Summary

• Ultra-miniature 0201 footprint for high-density mounting
• Low parasitic impedance suitable for frequencies above 26 GHz
• Low barrier height enabling good performance as a low-level mixer

RF Diode Applications

• Sensitive detector circuits
• Sampling circuits
• Mixer circuits

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel dimensions. Confirm compliance with RoHS and halogen-free requirements prior to integration. Ensure ESD handling precautions are followed during storage and assembly to prevent damage to the device.

RF Diode Selection Notes

Select this component when space constraints require a 0201 package size while maintaining low parasitic capacitance below 0.18 pF. Verify that the 2 V reverse voltage rating meets the circuit's peak inverse voltage requirements. Consider the 12 Ω maximum series resistance for mixer conversion loss calculations.

RF Diode Part Context

This part belongs to the Skyworks SMS7621 series of surface-mount mixer and detector Schottky diodes. The series offers various configurations including singles, common cathode, and series pairs across multiple packages such as SOT-23 and SC-70. The SMS7621-060 specifically utilizes the 0201 footprint.

RF Diode Replacement Considerations

SMS7621-040LF