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The SP8J5FRATB is a dual P-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage of -30 V and a continuous drain current of -7 A. The device exhibits a typical on-resistance of 0.03 Ω at a gate-source voltage of 4 V, with reduced values of 0.025 Ω at 4.5 V and 0.02 Ω at 10 V. Total gate charge is typically 25 nC, supporting fast switching capabilities. Power dissipation is rated at 2 W, with an operating temperature range from -55°C to +150°C. The component is qualified under the AEC-Q101 automotive standard.
Verify the specific ordering suffix to confirm the tape-and-reel packaging format, as indicated by the ATB designation. Confirm that the AEC-Q101 qualification aligns with your target automotive application's thermal and electrical stress requirements. Ensure the SOP-8 footprint matches your PCB layout constraints before finalizing procurement decisions.
Select this component when a dual P-channel solution is required within a small SOP-8 footprint. The 4 V drive characteristic makes it suitable for systems where the control logic operates at lower voltages than standard 10 V gate thresholds. Consider the 2 W power dissipation limit and thermal resistance of the SOP-8 package when designing heat management strategies for high-current loads.
This part belongs to ROHM's series of automotive-grade power MOSFETs designed for robust performance in vehicle electronics. The SOP-8 package provides a balance between current handling capability and board space efficiency. As a dual device, it simplifies bill-of-materials and assembly processes for applications requiring multiple P-channel switches.
The SP8M10FRA is listed as a similar level replacement with the same pinout and package, though it offers different electrical characteristics including higher current capacity and lower on-resistance at specific drive voltages. Verify compatibility with existing thermal and electrical designs before substitution.