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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A
- Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：2600pF @ 10V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8J5FU6TB is a dual P-channel MOSFET array manufactured by ROHM Semiconductor. It features a SOP-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 30V and a continuous drain current of 7A per channel. Key electrical parameters include a typical on-resistance of 29 mOhms, a gate charge of 18 nC, and a threshold voltage of 2.5V. Operating temperatures range from -55°C to +150°C with a power dissipation rating of 2W.
Feature Summary
- Dual P-channel configuration in a compact SOP-8 surface-mount package
- Low on-resistance for efficient power switching applications
- Enhancement mode operation with standard gate drive compatibility
Applications
- DC-DC converter circuits
- Motor driver interfaces
- Power management unit switches
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life (EOL) notifications, as this specific part number has been marked obsolete in some regional catalogs. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly.
Selection Notes
Select this component for low-voltage DC applications requiring dual P-channel switching. Compare the 30V rating and 7A current capacity against circuit demands. Consider the SOP-8 footprint for space-constrained designs. Evaluate thermal performance at 2W dissipation relative to PCB copper area and ambient temperature constraints.
Part Context
This part belongs to ROHM's discrete MOSFET family designed for general-purpose switching. It complements N-channel variants within the same package lineup. The dual configuration allows for half-bridge or high-side switch implementations without occupying additional board space compared to single-channel devices.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The SP8J5FU6TB is listed as obsolete in certain distributor records; consult official ROHM resources for current equivalent recommendations.
