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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：51mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：230pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SP8K1FRATB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, designed for automotive applications. It features a 30V drain-source voltage (VDSS) and a continuous drain current (ID) of 5.0A. The device operates with a 4V drive voltage and exhibits a typical on-resistance (RDS(on)) of 0.058Ω at 4V. Packaged in an SOP-8 surface-mount configuration measuring 6.0x5.0mm, it dissipates up to 2.0W of power. The component is AEC-Q101 qualified and has a total gate charge (Qg) of 3.9nC.
Feature Summary
- Dual N-channel configuration within a compact SOP-8 package
- Optimized for low-voltage 4V drive applications
- Automotive-grade reliability certified under AEC-Q101 standards
Applications
- Automotive electronic control units requiring low-side switching
- Power management circuits in vehicle infotainment systems
- General-purpose load switching in automotive environments
Procurement Notes
Verify the specific ordering suffix TB against official ROHM documentation to confirm packaging details. Confirm that the component status remains appropriate for your design lifecycle, as this part may be subject to production restrictions or end-of-life notices for new designs.
Selection Notes
Select this component when a dual N-channel MOSFET with 30V capability and 4V logic compatibility is required. Ensure the thermal design accommodates the 2.0W power dissipation limit in the SOP-8 package. Verify that the 5.0A current rating meets the peak and continuous load requirements of the target application.
Part Context
This part belongs to ROHM's automotive-grade MOSFET portfolio, specifically engineered for robust performance in vehicle electronics. The SP8K1 series provides a solution for integrating multiple switching functions into space-constrained PCB layouts while maintaining compliance with strict automotive quality standards.
Replacement Considerations
The SP8K2HZGTB is documented as a direct replacement with the same pinout and package. It offers improved electrical characteristics, including a lower RDS(on) and higher current capacity, while maintaining the 4V drive voltage and SOP-8 form factor.
