SP8K22FU6TB

Overview

The SP8K22FU6TB is a dual N-channel silicon MOSFET in an SOP8 surface-mount package. It features built-in gate-source protection diodes and operates with a drain-source voltage of 45V and continuous drain current of ±4.5A. The device has a total power dissipation of 2W, with a typical on-state resistance of 33mΩ at VGS=10V and 46mΩ at VGS=4V. Total gate charge is typically 9.6nC, supporting efficient switching in DC/DC converters and inverters.

Feature Summary

• Dual N-channel configuration within a compact SOP8 surface-mount package
• Integrated gate-source protection diode for static electricity defense
• Optimized for low-voltage drive applications with 4V operation capability

Applications

• Power switching circuits
• DC/DC converter modules
• Inverter systems

Procurement Notes

Verify the specific ordering suffix FU6TB against official ROHM documentation to confirm tape-and-reel packaging details. Ensure compatibility with standard SOP8 footprint dimensions during PCB layout. Confirm RoHS compliance status through the manufacturer's latest quality data sheets before final procurement authorization.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a small form factor. Evaluate thermal derating requirements as the total power dissipation is limited to 2W. Verify that the 45V breakdown voltage meets the circuit's maximum operating conditions and that the 4V drive threshold aligns with the controller logic levels.

Part Context

This part belongs to ROHM's 4V drive Nch+Nch MOSFET series. It utilizes silicon N-channel technology designed for general-purpose electronic equipment. The SOP8 package provides a balance between thermal performance and space efficiency for consumer and office automation applications.

Replacement Considerations

Consult ROHM's official replacement guide for equivalent dual N-channel devices. Verify pinout compatibility and electrical parameter margins before substitution.