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Product Detailed Parameters
- Description：MOSFET 2N-CH 45V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：45V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：46mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：550pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K22HZGTB is an automotive-grade dual N-channel power MOSFET manufactured by Rohm Semiconductor. It integrates two independent N-channel transistors within a compact SOP8 surface-mount package, designed for high-efficiency switching applications. The device features a drain-source voltage rating of 45V and a continuous drain current capacity of 4.5A. Key electrical parameters include a typical on-resistance (RDS(on)) of 0.033Ω at VGS=10V and 0.046Ω at VGS=4V. With a total gate charge of 6.8nC and compliance with the AEC-Q101 standard, it supports low-voltage drive requirements while maintaining robust thermal performance suitable for automotive environments.
Feature Summary
- Dual N-channel configuration in a single SOP8 package
- Automotive grade reliability compliant with AEC-Q101 standards
- Low on-resistance optimized for 4V and 10V drive voltages
- Integrated ESD protection diodes for enhanced circuit safety
Applications
- Automotive switching circuits
- Motor control applications
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging configuration. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Check the supply status as manufacturing phases may affect availability. Ensure compatibility with RoHS and halogen-free material requirements. Validate pinout alignment during integration to prevent installation errors.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a small SOP8 footprint. Consider the 45V breakdown voltage and 4.5A current rating against load requirements. Evaluate the RDS(on) values at your specific gate drive voltage to estimate conduction losses. Verify that the thermal dissipation capabilities meet the system's heat management constraints.
Part Context
This part belongs to Rohm's lineup of automotive-compliant power MOSFETs. It shares identical electrical specifications and pinout with the SP8K22FRA, which is designated as not recommended for new designs. The SP8K22HZG variant represents the active replacement or equivalent offering within the same product family.
Replacement Considerations
The SP8K22FRA serves as a direct functional substitute with identical pinout and specifications. However, the SP8K22FRA is marked as not recommended for new designs. Designers should prioritize the SP8K22HZGTB for new implementations due to its active status.
