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Product Detailed Parameters
- Description：MOSFET 2N-CH 45V 6A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：45V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K24HZGTB is a dual N-channel power MOSFET from ROHM Semiconductor, designed for high-reliability automotive applications. It features a 45V drain-source voltage (V_DSS) and a continuous drain current (I_D) of 6A. The device offers low on-resistance, with typical values of 0.026Ω at V_GS=4V, 0.024Ω at V_GS=4.5V, and 0.018Ω at V_GS=10V. Total gate charge (Q_g) is typically 15.4nC. It operates within a storage temperature range of -55°C to 150°C and is housed in an SOP8 surface-mount package measuring 6.0x5.0mm. The component complies with the AEC-Q101 automotive grade standard.
Feature Summary
- Dual N-channel configuration integrated into a compact SOP8 surface-mount package
- Compliant with AEC-Q101 automotive reliability standards
- Low on-resistance optimized for efficient switching performance
- Lead-free plating and RoHS compliance
Applications
- Automotive switching applications
- High-reliability vehicle electronic systems
Procurement Notes
Verify the specific ordering suffix TB against official ROHM documentation to confirm taping packaging details. Ensure that the procurement channel provides valid traceability for AEC-Q101 certified components intended for automotive use. Cross-reference the part number with current supply status notices to avoid obsolete or discontinued variants during acquisition.
Selection Notes
Select this component when a dual N-channel MOSFET with 45V rating and 6A current capacity is required in an SOP8 footprint. Consider the 4V drive voltage compatibility for logic-level control interfaces. Evaluate the thermal dissipation requirements against the 2W power dissipation limit and the specific R_DS(on) characteristics at the target gate drive voltage.
Part Context
The SP8K24HZGTB belongs to the SP8K series of automotive-grade dual MOSFETs. It shares the SOP8 package form factor with other models in the family but is distinguished by its 45V voltage rating and 6A current handling capability. This positioning makes it suitable for applications requiring moderate voltage isolation and current switching within constrained board space.
Replacement Considerations
The SP8M24FRA is documented as a similar level replacement with the same pinout and package, though it is a complementary N+P type and marked as not recommended for new designs. Verify electrical parameter compatibility before substitution.
