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The SP8K2FU6TB is a dual MOSFET array manufactured by Rohm Semiconductor, housed in an SOP-8 surface-mount package. It integrates one N-channel and one P-channel enhancement-mode transistor within a single compact footprint. The device features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) rating of 6 A. Key electrical parameters include a typical on-resistance (Rds(on)) of 47 mΩ and built-in gate-source protection diodes. Designed for power switching and DC/DC converter applications, it offers low on-resistance to minimize conduction losses while maintaining a small physical size suitable for space-constrained electronic designs.
Verify the obsolete status of this specific part number before initiating procurement processes. Confirm availability through authorized distributors or approved substitute components such as the SH8KA7GZETB if direct sourcing is unavailable. Ensure that any alternative selection matches the required electrical specifications and package dimensions to maintain circuit integrity without requiring design modifications.
Select this component for applications requiring a compact dual MOSFET solution with 30 V capability. The 6 A current rating and 47 mΩ on-resistance make it suitable for moderate power switching tasks. Consider the SOP-8 package constraints and thermal dissipation requirements when designing the PCB layout. Verify compatibility with drive voltages and ensure adequate heat sinking if operating near maximum ratings.
This component belongs to Rohm's series of dual MOSFET arrays designed for efficient power management in consumer and industrial electronics. The SP8K2 family typically offers complementary channel configurations to simplify half-bridge or synchronous rectifier designs. These devices are engineered to reduce component count and assembly complexity compared to discrete solutions, providing a streamlined approach to low-voltage power control systems.
The SH8KA7GZETB is listed as a similar available substitute. Verify pinout compatibility and electrical parameter alignment before substitution.