SP8K2HZGTB

SP8K2HZGTB

$2.28
  • Description:MOSFET 2N-CH 30V 6A 8SOP
  • Series:-

SKU:f9a7797f3800 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 6A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:520pF @ 10V
  • Power - Max:1.4W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SP8K2HZGTB

Overview

The SP8K2HZGTB is an automotive-grade dual N-channel power MOSFET compliant with AEC-Q101 standards. Housed in a compact SOP-8 surface-mount package, it integrates two independent 30V MOSFETs within a single component. The device features built-in ESD protection diodes for enhanced reliability in switching applications. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 6A. Typical on-resistance (R_DS(on)) values are 0.033Ω at V_GS=4V, 0.03Ω at V_GS=4.5V, and 0.021Ω at V_GS=10V. Total gate charge (Q_g) is typically 7.2nC, with a power dissipation rating of 2W and a drive voltage of 4V.

Feature Summary

  • Dual N-channel configuration integrated into a single SOP-8 package for space-efficient designs
  • Automotive grade qualification ensuring compliance with AEC-Q101 reliability standards
  • Integrated ESD protection diodes to safeguard against electrostatic discharge events
  • Low on-resistance characteristics optimized for efficient power switching operations

Applications

  • Automotive electronic control units requiring robust switching capabilities
  • Power management circuits in vehicle infotainment and instrument clusters
  • General purpose switching applications in automotive environments

Procurement Notes

Verify the specific ordering suffix TB during procurement to ensure correct taping packaging configuration. Confirm RoHS compliance status as required by project specifications. Cross-reference the active supply status with manufacturer announcements to avoid obsolescence risks. Ensure storage temperature limits between -55°C and 150°C are maintained during handling and logistics to preserve component integrity.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a small SOP-8 footprint. The 30V rating suits low-voltage automotive systems. Compare R_DS(on) performance at specific gate drive voltages against circuit requirements. Consider the 6A current capacity and 2W power dissipation limits for thermal management planning. Verify compatibility with existing PCB layout constraints due to the 6.0x5.0mm package dimensions.

Part Context

The SP8K2HZGTB belongs to the SP8K series of automotive power MOSFETs manufactured by ROHM Semiconductor. This series is designed specifically for automotive applications demanding high reliability and compact form factors. The part shares the same pinout and package style as related models like the SP8K1FRA, facilitating potential design upgrades or replacements within compatible automotive electronic architectures.

Replacement Considerations

The SP8K1FRA serves as a direct replacement option with identical pinout and package dimensions. Note that the SP8K1FRA has lower drain current (5.0A vs 6.0A) and higher on-resistance compared to the SP8K2HZGTB. Verify if the reduced current capacity meets the specific application requirements before substitution.

SP8K2HZGTBSP8K2HZGTB
$2.28
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