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The SP8K2HZGTB is an automotive-grade dual N-channel power MOSFET compliant with AEC-Q101 standards. Housed in a compact SOP-8 surface-mount package, it integrates two independent 30V MOSFETs within a single component. The device features built-in ESD protection diodes for enhanced reliability in switching applications. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 6A. Typical on-resistance (R_DS(on)) values are 0.033Ω at V_GS=4V, 0.03Ω at V_GS=4.5V, and 0.021Ω at V_GS=10V. Total gate charge (Q_g) is typically 7.2nC, with a power dissipation rating of 2W and a drive voltage of 4V.
Verify the specific ordering suffix TB during procurement to ensure correct taping packaging configuration. Confirm RoHS compliance status as required by project specifications. Cross-reference the active supply status with manufacturer announcements to avoid obsolescence risks. Ensure storage temperature limits between -55°C and 150°C are maintained during handling and logistics to preserve component integrity.
Select this component when a dual N-channel MOSFET solution is required in a small SOP-8 footprint. The 30V rating suits low-voltage automotive systems. Compare R_DS(on) performance at specific gate drive voltages against circuit requirements. Consider the 6A current capacity and 2W power dissipation limits for thermal management planning. Verify compatibility with existing PCB layout constraints due to the 6.0x5.0mm package dimensions.
The SP8K2HZGTB belongs to the SP8K series of automotive power MOSFETs manufactured by ROHM Semiconductor. This series is designed specifically for automotive applications demanding high reliability and compact form factors. The part shares the same pinout and package style as related models like the SP8K1FRA, facilitating potential design upgrades or replacements within compatible automotive electronic architectures.
The SP8K1FRA serves as a direct replacement option with identical pinout and package dimensions. Note that the SP8K1FRA has lower drain current (5.0A vs 6.0A) and higher on-resistance compared to the SP8K2HZGTB. Verify if the reduced current capacity meets the specific application requirements before substitution.