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The SP8K31HZGTB is a dual N-channel power MOSFET designed for automotive applications, certified under the AEC-Q101 standard. It integrates two independent N-channel transistors within an SOP-8 surface-mount package measuring 6.0x5.0 mm with a height of 1.75 mm. The device features a drain-source voltage (V_DSS) rating of 60 V and a continuous drain current (I_D) of 3.5 A. Typical on-resistance (R_DS(on)) values are 0.105 Ω at a gate drive of 4.0 V, 0.1 Ω at 4.5 V, and 0.085 Ω at 10 V. Total gate charge (Q_g) is typically 3.7 nC, supporting efficient switching. Power dissipation is rated at 2.0 W, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix TB against the required reel quantity of 2500 units. Confirm that the SOP-8 package dimensions match the design footprint. Ensure the component meets the required AEC-Q101 reliability standards for the target automotive application environment.
Select this part when a dual N-channel topology is required in an SOP-8 form factor. The 60V rating and 3.5A current capacity suit low-to-medium power automotive loads. Compare R_DS(on) at 4V drive against system requirements to ensure adequate efficiency for low-voltage logic control scenarios.
This component belongs to ROHM's automotive-grade MOSFET portfolio, specifically engineered for high-reliability vehicle electronics. The SOP-8 packaging allows for space-constrained PCB layouts while maintaining thermal performance suitable for automotive environments. It serves as a direct replacement for legacy parts like the SP8K31FRA, which is no longer recommended for new designs.
The SP8K31HZG is confirmed as a same pinout and package substitute for the SP8K31FRA.