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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SP8K33TB1 is a dual N-channel power MOSFET designed for automotive applications, complying with the AEC-Q101 standard. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 5.0 A. The device offers low on-resistance, typically 0.04 Ω at a gate drive voltage of 4 V, and 0.038 Ω at 4.5 V. Packaged in an SOP-8 format measuring 6.0 x 5.0 mm with a height of 1.75 mm, it includes built-in ESD protection diodes. The total gate charge is typically 8 nC, and power dissipation reaches 2 W. Operating temperatures range from -55°C to 150°C.
Feature Summary
- Dual N-channel configuration within a compact SOP-8 package
- AEC-Q101 qualified for automotive reliability standards
- Low on-resistance optimized for 4V and 4.5V gate drive voltages
- Integrated ESD protection diodes for enhanced circuit robustness
Applications
- Automotive switching applications requiring high reliability
- Power management circuits in vehicle electronics
- Load switching systems compatible with low-voltage gate drivers
Procurement Notes
Verify the specific ordering suffix TB1 against official RoHM documentation to confirm tape-and-reel packaging details. Ensure compatibility with existing SOP-8 footprint designs. Confirm supply status as active or obsolete before finalizing procurement plans. Cross-reference datasheet revisions to validate electrical parameters match current production batches.
Selection Notes
Select this component when a dual N-channel MOSFET with AEC-Q101 qualification is required for automotive environments. The 60V rating suits low-voltage automotive systems. Verify that the 4V drive capability aligns with the system's logic levels. Consider the 5A current limit and 2W power dissipation for thermal management requirements in the target application design.
Part Context
This part belongs to the SP8K33 series of dual N-channel MOSFETs manufactured by ROHM Semiconductor. The series is specifically engineered for automotive use, meeting stringent quality standards like AEC-Q101. The SP8K33TB1 variant utilizes the SOP-8 package, providing a balance between performance and board space efficiency for integrated power solutions.
Replacement Considerations
The SP8K33HZG is listed as a similar level replacement with the same pinout and package. Verify if the HZG suffix indicates any functional differences or updated manufacturing lines before substitution.
