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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8K3FU6TB is a dual N-channel MOSFET manufactured by Rohm Semiconductor, designed for low-voltage drive applications. It features a SOP-8 surface-mount package with eight terminals and an N+N polarity configuration. The device supports a drain-source voltage of 30V and offers a continuous drain current of 7.0A. Typical on-resistance values are specified at various gate drive voltages, including 4V and 4.5V, to ensure efficient switching performance in compact power management circuits.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized for low-voltage gate drive operations
- Surface-mount design suitable for automated assembly processes
Applications
- Low-voltage DC-DC converter circuits
- Power management modules for portable electronics
- Motor driver interfaces requiring dual channel control
Procurement Notes
Verify the exact ordering suffix and availability status directly with authorized distributors or the manufacturer before procurement. Confirm that the specific batch meets required quality standards and packaging specifications for your production line integration needs.
Selection Notes
Select this component when a dual N-channel MOSFET with low-voltage drive capability is required. Ensure the application voltage does not exceed the 30V rating and that the thermal management strategy accommodates the package's power dissipation limits under expected load conditions.
Part Context
This part belongs to Rohm's series of dual MOSFETs designed for space-constrained applications. It shares functional similarities with other models in the SP8K family but is distinguished by its specific drive voltage optimization and package configuration for surface-mount technology.
Replacement Considerations
Check for direct pin-compatible replacements such as the SH8K3 or similar dual N-channel MOSFETs from the same manufacturer. Verify that any substitute matches the critical electrical parameters and package dimensions to ensure seamless integration without circuit redesign.
