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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 4.5A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 5V, 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V, 850pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SP8M10FRATB is a complementary N+P MOSFET pair housed in an SOP-8 package, designed for automotive applications with AEC-Q101 qualification. The device supports a drain-source voltage of 30V and features a typical on-resistance of 0.017Ω at a 4.5V drive. It includes a P-channel component rated for 9A continuous drain current and an N-channel counterpart rated for 7A. The unit operates within a temperature range of -55°C to 150°C and dissipates up to 2W of power. This product is currently not recommended for new designs.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard
- Integrated complementary N-channel and P-channel MOSFETs in a single compact package
- Optimized low on-resistance characteristics for efficient 4V logic-level driving
Applications
- Automotive body electronics control modules
- Infotainment system power distribution networks
- Advanced Driver Assistance Systems (ADAS) switching circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm that the supply status remains acceptable for existing production lines, as this component is designated as not recommended for new designs. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.
Selection Notes
Select this component when a matched complementary MOSFET pair is required for space-constrained automotive layouts. Ensure the design accommodates the 30V breakdown voltage and 2W power dissipation limits. Verify that the 4V drive capability aligns with the system's logic levels, noting the distinct current ratings between the N-channel and P-channel elements within the same package.
Part Context
This part belongs to ROHM Semiconductor’s portfolio of automotive-qualified discrete semiconductors. It serves as a surface-mount solution for integrated power switching applications. The SOP-8 form factor allows for high-density PCB mounting while maintaining thermal performance suitable for demanding vehicle environments.
Replacement Considerations
The SP8M4HZG is listed as a similar level replacement offering the same pinout and package configuration. Designers should consult the respective datasheets to compare electrical parameters such as drain current and on-resistance before implementing any substitution.
