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Product Detailed Parameters
- Description：MOSFET N/P-CH 45V 6A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：45V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta), 4A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21.6nC @ 5V, 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 10V, 2400pF @10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M21HZGTB is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel pair within a single SOP-8 surface-mount package. It holds AEC-Q101 automotive qualification for reliability in harsh environments. The device provides a drain-source voltage (V_DSS) of 45V with continuous drain currents of 6A for the N-channel and 4A for the P-channel. Typical on-resistances are 25mΩ at V_GS=4V for the N-channel and 46mΩ for the P-channel. Total gate charge is 21.6nC, with a maximum power dissipation of 2W and an operating temperature range from -55°C to +150°C.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle electronics.
- Integrated ESD protection diodes enhance circuit durability against electrostatic discharge events.
- Complementary N-channel and P-channel configuration simplifies design for high-side and low-side switching applications.
Applications
- Automotive switch-mode power supplies
- DC-DC converter circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix 'GTB' corresponds to the tape-and-reel packaging format containing 2500 units per reel. Confirm that the component meets RoHS directives and matches the SOP-8 physical dimensions specified in the official datasheet before finalizing procurement orders.
Selection Notes
Select this component when designing automotive systems requiring a compact complementary MOSFET solution with 45V capability. Ensure the drive voltage aligns with the typical 4V or 4.5V thresholds to optimize the low on-resistance values. Verify thermal management requirements as the 2W power dissipation limit applies to the combined package.
Part Context
This part belongs to ROHM's SP8M series of complementary MOSFETs designed for space-constrained automotive applications. The 'G' indicates the SOP-8 package, while 'Z' denotes the automotive grade qualification. The 'TB' suffix specifies the taping quantity and packaging method used for automated assembly processes.
Replacement Considerations
The SP8M24HZGTB serves as a direct pin-compatible replacement offering similar 45V ratings but with different current and resistance characteristics. Verify that the alternative's on-resistance and gate charge parameters fit the specific efficiency and switching speed requirements of the target circuit design.
