SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SP8M2FU6TB is a complementary MOSFET pair manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It integrates an N-channel and a P-channel power MOSFET within a single SOP-8 package. The device supports a drain-source voltage of 30V with a continuous drain current of 5.0A. Key electrical characteristics include a typical on-resistance of 0.058Ω at a gate drive voltage of 4.5V. The total gate charge is typically 10nC, facilitating efficient switching performance. Power dissipation is rated at 1.5W, operating within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before procurement. Ensure the component meets all environmental and quality standards required for the intended application.
Select this component when a matched N-P channel pair is required for bridge or half-bridge configurations. Consider the 30V rating and 5.0A current capacity relative to load requirements. Evaluate the thermal performance given the 1.5W power dissipation limit in the SOP-8 package. Verify compatibility with the system's gate drive voltage levels, specifically 4.5V or 10V operation.
This part belongs to ROHM's series of complementary MOSFETs designed for space-constrained applications. It serves as an alternative to discrete N-channel and P-channel combinations, simplifying PCB layout and reducing component count. The SOP-8 package provides a balance between thermal performance and footprint size for medium-power applications.
The RS1G260MN is listed as a similar level replacement with the same package type. Verify pinout compatibility and electrical parameters such as Rds(on) and Vdss before substitution. Ensure the replacement meets the specific drive voltage and current requirements of the original design.