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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 4.5A (Ta)
- Rds On (Max) @ Id, Vgs：51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.9nC @ 5V, 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：230pF @ 10V, 850pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M3FU7TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor within a single HSOP-8 surface-mount package. The device utilizes silicon technology to provide efficient switching capabilities for low-voltage applications. Key electrical characteristics include a drain-source breakdown voltage of 30V and a continuous drain current rating of 5.0A. The component features low on-resistance values, typically specified at 58 mΩ and 52 mΩ under specific gate drive conditions, alongside a total gate charge of approximately 15 nC. It operates reliably across a temperature range from -55°C to +150°C with a power dissipation capacity of 2W.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a compact SOP8 package
- Features built-in gate-source protection diodes for enhanced reliability
- Optimized for low on-resistance to improve switching efficiency
- Designed for surface mount installation to save board space
Applications
- Power switching circuits
- DC/DC converter modules
- General purpose low-voltage switching applications
Procurement Notes
Verify the exact suffix FU7TB1 against official ROHM documentation to confirm tape-and-reel specifications and RoHS compliance status. Ensure the ordering part number matches the required packaging quantity of 2500 units per reel. Cross-reference the datasheet revision date to confirm the availability of the latest thermal and electrical parameters before finalizing procurement.
Selection Notes
Select this component for designs requiring a dual complementary MOSFET solution in an 8-pin footprint. The 30V rating suits low-voltage logic interfaces and battery-powered systems. Compare the 5.0A current capability and 2W power dissipation against thermal constraints. Verify that the 4V or 4.5V drive voltage requirements align with the system's microcontroller or driver output levels.
Part Context
This part belongs to ROHM's SP8M series of complementary MOSFETs, which are engineered for cost-effective power management in consumer electronics. The series emphasizes small form factors and low on-resistance. The SP8M3 variant specifically targets 30V applications, offering a balance between current handling and switching speed suitable for portable devices and embedded control systems.
Replacement Considerations
The SP8M3HZG is listed as a similar level part with the same pinout and package. Verify compatibility regarding AEC-Q101 automotive qualification if used in vehicle equipment, as standard versions may not be recommended for such applications.
