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Product Detailed Parameters
- Description：MOSFET 30V 9A/7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A, 7A
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1190pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M4TB is a complementary power MOSFET housed in an SOP-8 package, designed for automotive applications with AEC-Q101 certification. It integrates N-channel and P-channel devices with ESD protection diodes. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 9A. The typical on-resistance (R_DS(on)) is 0.017Ω at V_GS=4V, 0.016Ω at V_GS=4.5V, and 0.012Ω at V_GS=10V. Total gate charge (Q_G) is 15nC, with a drive voltage of 4V. Power dissipation is 2W, operating within a storage temperature range of -55°C to 150°C.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Integrated ESD protection diodes for enhanced circuit robustness
- Low on-resistance optimized for efficient switching applications
Applications
- Automotive switching circuits
- General-purpose low-voltage power management
- ESD-protected signal routing
Procurement Notes
Verify the specific suffix 'TB' against the manufacturer's official datasheet to confirm tape-and-reel packaging details and exact ordering specifications. Ensure compliance with RoHS directives as indicated in public documentation. Cross-reference the part number with authorized distributors to validate availability and authenticity before procurement.
Selection Notes
Select this component for designs requiring a compact SOP-8 footprint with integrated complementary N/P MOSFETs. The 30V rating and 9A current capacity suit low-voltage automotive loads. Verify that the 4V drive voltage requirement aligns with the system's logic levels to ensure optimal R_DS(on) performance and switching efficiency.
Part Context
This part belongs to ROHM's SP8 series of complementary power MOSFETs. These components are engineered for high-density surface-mount applications, combining both N-channel and P-channel transistors in a single package to reduce board space and simplify driver requirements for half-bridge or push-pull configurations.
Replacement Considerations
The SP8M4HZG is documented as a similar level replacement with the same pinout and package. Verify functional equivalence and parameter alignment before substitution.
