SP8M5TB

Overview

The SP8M5TB is a complementary MOSFET array manufactured by Rohm Semiconductor, featuring one N-channel and one P-channel enhancement-mode transistor in an 8-SOP surface-mount package. It supports a drain-source voltage of 30V with continuous drain currents rated at 6A for the N-channel and 7A for the P-channel. The device offers low on-resistance values of 0.042 ohms and 0.035 ohms respectively at Vgs=4.5V, enabling efficient switching performance. It operates within a temperature range of -55°C to +150°C and dissipates up to 2W of power.

Feature Summary

• Complementary N-channel and P-channel configuration in a single compact package
• Low gate drive voltage capability optimized for 4V logic systems
• Enhanced thermal stability supporting high junction temperatures

Applications

• DC-DC converter circuits
• Motor driver interfaces
• Power management unit switches

Procurement Notes

Verify component authenticity through authorized channels as this part is designated Not Recommended for New Designs. Confirm RoHS compliance status and check for direct replacement availability due to potential end-of-life constraints. Ensure packaging specifications match current inventory standards.

Selection Notes

Select this component for applications requiring low-voltage drive compatibility and moderate current handling in space-constrained designs. Evaluate thermal dissipation requirements against the 2W power rating. Consider alternative models if new design implementation is required due to obsolescence warnings.

Part Context

This dual MOSFET belongs to Rohm's complementary array series designed for general-purpose switching. It utilizes silicon technology housed in an 8-pin small outline package. The product line focuses on balancing electrical performance with physical footprint reduction for consumer electronics.

Replacement Considerations

Direct substitute: SH8M51GZETB. Verify pinout compatibility and electrical parameter alignment before integration.