SP8M6FRATB

SP8M6FRATB

  • Description:MOSFET N/P-CH 30V 5A 8SOP
  • Series:-

SKU:b689c3db08f2 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs:51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.9nC @ 5V, 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:230pF @ 10V, 490pF @ 10V
  • Power - Max:2W
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SP8M6FRATB

Overview

The SP8M6FRATB is a complementary N-Channel and P-Channel MOSFET pair manufactured by ROHM Semiconductor in an SOP-8 surface-mount package. Designed for automotive applications, it meets AEC-Q101 qualification standards. The device features a drain-source voltage (Vdss) of 30 V for both channels and a continuous drain current (Id) of 5.0 A. It exhibits a typical on-resistance (Rds(on)) of 0.058 Ω at a 4 V gate drive. With a total gate charge (Qg) of approximately 23 nC and power dissipation rated at 2 W, the component supports efficient switching in low-voltage environments.

Feature Summary

  • Integrated complementary N-channel and P-channel configuration within a single SOP-8 package to reduce board space.
  • Optimized for 4 V gate drive operation, simplifying driver circuit requirements for low-voltage systems.
  • AEC-Q101 qualified for reliability in automotive electronic control units and power management modules.

Applications

  • Automotive DC-DC converter circuits
  • Low-side and high-side load switch implementations
  • Battery management system protection stages

Procurement Notes

Verify the specific ordering suffix 'TB' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Confirm that the supply status remains acceptable for existing designs, as this component may be subject to end-of-life restrictions for new projects. Ensure compatibility with automated pick-and-place equipment regarding the SOP-8 footprint dimensions.

Selection Notes

Select this component when a matched N-P channel pair is required for synchronous rectification or bridge driving in 30 V automotive systems. The 4 V drive capability makes it suitable for microcontrollers with limited output voltage levels. Compare the 0.058 Ω Rds(on) against alternative packages if higher current density is needed, noting the 2 W power dissipation limit constrains thermal performance in dense layouts.

Part Context

This part belongs to ROHM's series of 4 V driven complementary MOSFETs designed specifically for automotive grade applications. It serves as a compact solution for replacing discrete N-channel and P-channel devices, thereby reducing assembly complexity. The SOP-8 package provides a balance between thermal performance and space efficiency for consumer and industrial electronics.

Replacement Considerations

SP8M6HZG is listed as a similar level replacement with the same pinout and package. Verify electrical parameter equivalence before substitution.

SP8M6FRATBSP8M6FRATB

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