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The SP8M6FRATB is a complementary N-Channel and P-Channel MOSFET pair manufactured by ROHM Semiconductor in an SOP-8 surface-mount package. Designed for automotive applications, it meets AEC-Q101 qualification standards. The device features a drain-source voltage (Vdss) of 30 V for both channels and a continuous drain current (Id) of 5.0 A. It exhibits a typical on-resistance (Rds(on)) of 0.058 Ω at a 4 V gate drive. With a total gate charge (Qg) of approximately 23 nC and power dissipation rated at 2 W, the component supports efficient switching in low-voltage environments.
Verify the specific ordering suffix 'TB' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Confirm that the supply status remains acceptable for existing designs, as this component may be subject to end-of-life restrictions for new projects. Ensure compatibility with automated pick-and-place equipment regarding the SOP-8 footprint dimensions.
Select this component when a matched N-P channel pair is required for synchronous rectification or bridge driving in 30 V automotive systems. The 4 V drive capability makes it suitable for microcontrollers with limited output voltage levels. Compare the 0.058 Ω Rds(on) against alternative packages if higher current density is needed, noting the 2 W power dissipation limit constrains thermal performance in dense layouts.
This part belongs to ROHM's series of 4 V driven complementary MOSFETs designed specifically for automotive grade applications. It serves as a compact solution for replacing discrete N-channel and P-channel devices, thereby reducing assembly complexity. The SOP-8 package provides a balance between thermal performance and space efficiency for consumer and industrial electronics.
SP8M6HZG is listed as a similar level replacement with the same pinout and package. Verify electrical parameter equivalence before substitution.