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The SP8M6HZGTB is a complementary power MOSFET manufactured by ROHM Semiconductor, designed for automotive applications under the AEC-Q101 standard. It integrates N-channel and P-channel transistors in a single SOP-8 package. The device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 5.0 A. The typical on-resistance (Rds(on)) at a 4.5 V drive is 0.058 Ω. Total gate charge (Qg) is typically 9.2 nC. Power dissipation (Pd) is rated at 2 W. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix HZGTB against the official ROHM datasheet to confirm package dimensions and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements for the intended automotive application. Check for obsolescence status as complementary MOSFETs may have limited new design recommendations.
Select this component when a compact complementary pair is required for low-voltage automotive power management. The 30V rating suits 12V systems. Compare Rds(on) at 4.5V drive against alternatives if using 4V logic interfaces. Verify thermal performance within the SOP-8 package for the expected load current.
This part belongs to ROHM's automotive-grade complementary MOSFET family. It serves as an upgrade or alternative to older discrete pairs, offering reduced board space and improved matching characteristics. The HZGTB suffix indicates the specific SOP-8 tape-and-reel packaging variant.
SP8M6FRATB is listed as a similar level replacement with the same pinout and package. Verify electrical parameters match the design requirements before substitution.