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SPB07N60C3ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 7.3A TO263-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPB07N60C3ATMA1
- Description：MOSFET N-CH 650V 7.3A TO263-3
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for SPB07N60C3ATMA1
Single FETs, MOSFETs Overview
SPB07N60C3ATMA1 is an N-channel enhancement-mode MOSFET from the Infineon CoolMOS C3 series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 7.3 A. The device has a maximum on-resistance of 600 mΩ and typical gate charge of 21 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation of 83 W in a D2PAK (TO-263) surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes CoolMOS C3 superjunction technology for optimized switching performance
- Designed for high-voltage applications with enhanced avalanche ruggedness
- Surface-mount construction facilitates automated assembly processes
Single FETs, MOSFETs Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply units
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and specific thermal characteristics required for your application design before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 650 V rating and moderate current handling are required in a compact surface-mount form factor. Evaluate thermal management requirements based on the specified power dissipation limits and junction-to-case thermal resistance values provided in the datasheet.
Single FETs, MOSFETs Part Context
This device belongs to the CoolMOS C3 family, representing a generation of superjunction MOSFETs designed to reduce conduction and switching losses compared to previous generations. The D2PAK package provides a balance between thermal performance and PCB space efficiency for medium-power applications.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible substitutes within the same CoolMOS C3 series include SPB11N60C3ATMA1 for higher current capacity or SPB04N60C3ATMA1 for lower cost options. Verify on-resistance and gate charge parameters match circuit requirements when cross-referencing.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
