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SPD02N60C3BTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 1.8A TO252-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPD02N60C3BTMA1
- Description：MOSFET N-CH 650V 1.8A TO252-3
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO252-3-11
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for SPD02N60C3BTMA1
Single FETs, MOSFETs Overview
The SPD02N60C3BTMA1 is a CoolMOS C3 power transistor with a 600 V drain-source voltage and a maximum continuous drain current of 1.8 A at 25 °C. It features a typical on-state resistance of 3 Ω at 10 V gate drive. The device supports periodic avalanche operation and includes an integrated reverse diode with a dv/dt rating of 15 V/ns. Total power dissipation reaches 25 W, and the operating junction temperature range spans from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Utilizes revolutionary high-voltage technology for optimized performance
- Features ultra-low gate charge characteristics for efficient switching
- Rated for periodic avalanche energy handling
Single FETs, MOSFETs Applications
- High-voltage power switching circuits
- Inductive load control applications
- Power supplies requiring robust avalanche capability
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix BTMA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the CoolMOS C3 generation requirements for your design. Confirm thermal management aligns with the specified RthJA and RthJC values provided in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V N-channel MOSFET with low gate charge is required. The 3 Ω RDS(on) suits low-current applications up to 1.8 A. Consider the periodic avalanche rating if snubberless designs are planned. Verify that the TO-252 or TO-251 package fits the PCB layout constraints.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS C3 family from Infineon Technologies. It represents a silicon-based power transistor designed for high-voltage efficiency. The series focuses on reducing switching losses through optimized gate charge while maintaining ruggedness against avalanche events common in hard-switching topologies.
Single FETs, MOSFETs Replacement Considerations
Check for direct cross-reference part numbers within the CoolMOS C3 lineup. Ensure any substitute maintains the 600 V rating and comparable RDS(on) and Qg values. Verify package compatibility for TO-252 or TO-251 footprints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
