SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
SPP02N80C3XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 800V 2A TO220-3. Review the specifications below when checking this part for your BOM.
The SPP02N80C3XKSA1 is an N-channel power MOSFET from Infineon Technologies, belonging to the CoolMOS C3 series. It utilizes silicon technology and features a TO-220-3 through-hole package. Key electrical parameters include a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 2 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 2.4 Ohms and a gate charge (Qg) of 16 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 40 W.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Check for end-of-life or not-recommended-for-new-designations prior to integration into new hardware designs.
Select this component for designs requiring 800 V blocking capability with moderate current handling. Evaluate thermal management requirements based on the 40 W power dissipation limit. Ensure gate drive voltages remain within the specified ±20 V range for reliable enhancement mode operation.
This part belongs to the CoolMOS C3 family, representing a generation of superjunction MOSFETs designed to reduce conduction and switching losses compared to standard planar technologies. The 'XKSA1' suffix typically denotes specific tape-and-reel packaging configurations for automated assembly processes.
Direct pin-compatible alternatives within the same CoolMOS C3 series may include SPP02N80C3. Verify that substitute parts match the required Rds(on), Qg, and thermal resistance specifications before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.