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SPU04N60C3BKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 4.5A TO251-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPU04N60C3BKMA1
- Description：MOSFET N-CH 650V 4.5A TO251-3
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO251-3-21
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for SPU04N60C3BKMA1
Single FETs, MOSFETs Overview
SPU04N60C3BKMA1 is an N-channel CoolMOS power MOSFET in a TO-251 (IPAK) package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 4.5 A at 25°C, with a pulsed current rating of 13.5 A. The device has a maximum on-state resistance of 950 mΩ at 10 V gate drive and a typical gate charge of 19 nC. Thermal performance includes a junction-to-case thermal resistance of 2.5 K/W. The gate threshold voltage ranges from 2.1 V to 3.9 V.
Single FETs, MOSFETs Feature Summary
- Utilizes CoolMOS technology for low specific on-state resistance
- Features very low energy storage in output capacitance
- Designed for low gate charge to improve switching efficiency
Single FETs, MOSFETs Applications
- High-frequency power supplies
- Motor control applications
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the obsolete status of SPU04N60C3BKMA1 before procurement planning. Confirm availability of approved substitutes such as SIHU6N62E-GE3. Ensure final component selection aligns with current design requirements and supply chain constraints. Cross-reference datasheet specifications against legacy documentation to confirm electrical parameters remain consistent with original design intent.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust high-voltage switching capabilities within a compact surface-mount footprint. Evaluate thermal management strategies given the 2.5 K/W junction-to-case resistance. Consider the 600 V breakdown voltage for mains-connected or industrial power stages. Verify that the 4.5 A continuous current rating meets the load requirements under expected operating temperatures.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's CoolMOS family, known for optimized trade-offs between conduction and switching losses. The SPU04N60C3 variant specifically targets cost-sensitive applications requiring reliable performance in standard TO-251 packages. It represents a mature generation of superjunction MOSFET technology widely used in general-purpose power conversion.
Single FETs, MOSFETs Replacement Considerations
The SPU04N60C3BKMA1 is obsolete. Publicly confirmed substitute: SIHU6N62E-GE3 by Vishay Siliconix. Verify pinout compatibility and electrical parameter equivalence before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
