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SPU09P06PL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 9.7A TO251-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPU09P06PL
- Description：MOSFET P-CH 60V 9.7A TO251-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：42W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：P-TO251-3-1
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for SPU09P06PL
Single FETs, MOSFETs Overview
The Infineon SPU09P06PL is a P-Channel SIPMOS Power Transistor in a P-TO251-3-1 package. It features a -60 V drain-source breakdown voltage and a continuous drain current of -9.7 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.4 Ω at -4.5 V gate drive and 0.25 Ω at -10 V. It supports an operating junction temperature up to 175°C, includes avalanche and dv/dt ratings, and provides a thermal resistance from junction to case of 3.6 K/W.
Single FETs, MOSFETs Feature Summary
- Logic-level enhancement mode operation for efficient gate driving
- Avalanche energy rated capability for robust transient handling
- High dv/dt rating for fast switching applications
- Extended 175°C operating temperature range
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67042-S4020 to confirm the P-TO251-3-1 package variant. Ensure that the component meets all required electrical specifications for the target application environment. Confirm compliance with relevant industry standards before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component based on its -60 V voltage rating and -9.7 A current capacity requirements. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the logic-level gate threshold for compatibility with available control signals.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of power transistors. It utilizes planar trench technology to achieve low on-state resistance. The P-TO251-3-1 package offers a compact form factor suitable for surface-mount assembly on printed circuit boards.
Single FETs, MOSFETs Replacement Considerations
The SPD09P06PL shares identical electrical characteristics but utilizes a P-TO252 package. Verify pinout compatibility and thermal performance differences before substituting.
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