SQ1902AEL-T1_GE3

Overview

The SQ1902AEL-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides a continuous drain current of 0.78 A at 25 °C and a maximum gate-source voltage of ±12 V. Packaged in a SOT-363 (SC-70) surface-mount configuration, it offers low on-state resistance of 0.415 Ω at VGS = 4.5 V. Qualified under AEC-Q101 standards, the component supports high-reliability applications requiring compact footprints.

Feature Summary

• Dual N-channel configuration with independent channel control
• TrenchFET power MOSFET technology for optimized performance
• Automotive qualification compliant with AEC-Q101 standards
• Halogen-free construction adhering to IEC 61249-2-21 definitions

Applications

• Automotive electronic systems requiring AEC-Q101 compliance
• Low-voltage DC-DC converter circuits
• Power management modules in compact mobile devices
• General-purpose switching applications in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm package type and lead finish specifications. Ensure that procurement channels provide traceable lot codes and date codes as indicated by the part marking code structure. Confirm RoHS compliance status through manufacturer certificates prior to finalizing supply agreements.

Selection Notes

Select this component for designs requiring a dual N-channel topology within a minimal footprint. Evaluate thermal constraints carefully, as the SOT-363 package has limited heat dissipation capabilities compared to larger packages. Verify that the required gate drive voltage aligns with the specified threshold characteristics to ensure optimal switching efficiency and minimize conduction losses during operation.

Part Context

This component belongs to the SQ1902EL series manufactured by Vishay Siliconix. It represents a specialized automotive-grade variant designed for high reliability in harsh environments. The product line emphasizes compact packaging solutions suitable for modern miniaturized electronic assemblies while maintaining robust electrical performance metrics.

Replacement Considerations

Direct substitutes must match the 20 V rating, dual N-channel configuration, and SOT-363 package dimensions. Verify equivalent AEC-Q101 qualification status if used in automotive contexts. Cross-reference pinout compatibility and thermal resistance values to ensure seamless integration without redesigning the printed circuit board layout.

FAQ

What is the maximum operating junction temperature for the SQ1902AEL-T1_GE3?

The maximum operating junction temperature is +175 °C.

Does the SQ1902AEL-T1_GE3 meet automotive reliability standards?

Yes, the device is qualified according to the AEC-Q101 standard for automotive applications.

What is the typical total gate charge (Qg) for this MOSFET?

The typical total gate charge is 0.83 nC when tested at VGS = 4.5 V, VDS = 10 V, and ID = 1.2 A.