SQ1922AEEH-T1_GE3

$0.60

Description：MOSFET 2N-CH 20V 0.85A SC70-6
Series：TrenchFET®

SKU:f5161b224205 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.85A SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：850mA (Tc)
Rds On (Max) @ Id, Vgs：300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：60pF @ 10V
Power - Max：1.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：Automotive
Qualification：AEC-Q101

Download product information

SQ1922AEEH-T1_GE3

Overview

The SQ1922AEEH-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and a maximum on-resistance of 0.300 Ω at VGS = 4.5 V. The device supports a continuous drain current of 0.85 A per leg and operates within a junction temperature range of -55 °C to +175 °C. Packaged in a compact SC-70 (SOT-363) configuration, it offers typical ESD protection of 800 V and includes an integrated body diode with a forward voltage of 0.8 V at 0.5 A.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards for reliability.
TrenchFET power MOSFET architecture providing low on-resistance.
Integrated electrostatic discharge protection network.

Applications

Automotive electronic control units
Low-power load switching applications
Miniaturized signal processing circuits

Procurement Notes

Verify the component against official Vishay datasheet document number 76699 to confirm technical specifications. Ensure the ordering suffix matches the required packaging format. Confirm that the specific batch meets AEC-Q101 automotive qualification requirements before integration into final assemblies.

Selection Notes

Select this component for designs requiring a dual N-channel configuration in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Evaluate thermal constraints carefully due to the small package size and limited power dissipation capabilities under steady-state conditions.

Part Context

This part belongs to the Vishay Siliconix SQ series of dual-channel MOSFETs. It utilizes the SC-70 (SOT-363) package, which provides two independent channels in a six-lead surface-mount configuration. The device is designed specifically for space-constrained automotive and industrial applications.

Replacement Considerations

Direct substitutes include other Vishay dual N-channel MOSFETs in the SOT-363 package with comparable voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics when replacing with devices from different manufacturers.