Single FETs, MOSFETs SQ3469EV-T1_GE3 product image

SQ3469EV-T1_GE3

$0.74
  • Description:MOSFET P-CH 20V 8A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:222940c58f1b Category: Brand:

  
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SQ3469EV-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 8A 6TSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQ3469EV-T1_GE3

  • Description:MOSFET P-CH 20V 8A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:36mOhm @ 6.7A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-TSOP
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for SQ3469EV-T1_GE3

SQ3469EV-T1_GE3

Single FETs, MOSFETs Overview

The SQ3469EV-T1_GE3 is an automotive-grade P-Channel MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage and supports continuous drain currents of -8 A at 25 °C and -5 A at 125 °C. The device achieves a maximum on-resistance of 0.036 Ω at VGS = -10 V and 0.064 Ω at VGS = -4.5 V. It operates within a junction temperature range of -55 °C to +175 °C, dissipating up to 5 W at 25 °C case temperature. The component is housed in a TSOP-6 package.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture
  • 100% gate resistance and unclamped inductive switching tested

Single FETs, MOSFETs Applications

  • Automotive load switching applications
  • Power management circuits requiring high thermal stability
  • Low-side or high-side switching in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct package and lead-free compliance. Confirm current production status as automotive components may undergo lifecycle changes. Validate that the TSOP-6 footprint matches your PCB layout requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade P-Channel MOSFETs with low on-resistance. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(on) performance. Consider the thermal dissipation capabilities relative to your system's ambient temperature and PCB copper area constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It utilizes the TSOP-6 surface-mount package, which provides efficient thermal transfer through the drain foot. The device is designed specifically for demanding automotive environments, offering enhanced ruggedness compared to standard commercial grade alternatives.

Single FETs, MOSFETs Replacement Considerations

SQ3469DV-T1-GE3

Single FETs, MOSFETs FAQ

Is the SQ3469EV-T1_GE3 suitable for high-temperature automotive environments?

Yes, the device is rated for an operating junction and storage temperature range from -55 °C to +175 °C.

What testing guarantees are provided for this MOSFET?

The datasheet specifies that 100% of units undergo gate resistance and unclamped inductive switching (UIS) testing.

SQ3469EV-T1_GE3SQ3469EV-T1_GE3
$0.74
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