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SQ3469EV-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 8A 6TSOP. Review the specifications below when checking this part for your BOM.
The SQ3469EV-T1_GE3 is an automotive-grade P-Channel MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage and supports continuous drain currents of -8 A at 25 °C and -5 A at 125 °C. The device achieves a maximum on-resistance of 0.036 Ω at VGS = -10 V and 0.064 Ω at VGS = -4.5 V. It operates within a junction temperature range of -55 °C to +175 °C, dissipating up to 5 W at 25 °C case temperature. The component is housed in a TSOP-6 package.
Verify the specific ordering suffix against official Vishay documentation to ensure correct package and lead-free compliance. Confirm current production status as automotive components may undergo lifecycle changes. Validate that the TSOP-6 footprint matches your PCB layout requirements before finalizing procurement decisions.
Select this component when designing circuits requiring robust automotive-grade P-Channel MOSFETs with low on-resistance. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(on) performance. Consider the thermal dissipation capabilities relative to your system's ambient temperature and PCB copper area constraints.
This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It utilizes the TSOP-6 surface-mount package, which provides efficient thermal transfer through the drain foot. The device is designed specifically for demanding automotive environments, offering enhanced ruggedness compared to standard commercial grade alternatives.
SQ3469DV-T1-GE3
Yes, the device is rated for an operating junction and storage temperature range from -55 °C to +175 °C.
The datasheet specifies that 100% of units undergo gate resistance and unclamped inductive switching (UIS) testing.
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