SQ3985EV-T1_GE3

$0.74

Description：MOSFET 2P-CH 20V 3.9A 6TSOP
Series：TrenchFET®

SKU:4625859c2618 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 3.9A 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
Rds On (Max) @ Id, Vgs：145mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 10V
Power - Max：3W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：6-TSOP
Grade：Automotive
Qualification：AEC-Q101

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SQ3985EV-T1_GE3

Overview

The SQ3985EV-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -20 V drain-source voltage and supports a continuous drain current of -3.9 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C. Key electrical parameters include a maximum on-resistance of 0.145 Ω at VGS = -4.5 V and a total gate charge of 4.6 nC. Packaged in a TSOP-6 surface-mount configuration, it meets AEC-Q101 qualification standards for automotive reliability.

Feature Summary

AEC-Q101 qualified for automotive applications
TrenchFET power MOSFET technology
100% Rg and UIS tested

Applications

Automotive electronic systems requiring dual P-channel switching
Low-side or high-side load switch configurations
Power management circuits in harsh thermal environments

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance status. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Cross-reference the datasheet revision number to ensure all latest electrical specifications and thermal ratings are considered during integration.

Selection Notes

Select this component when a dual P-channel configuration with low on-resistance is required in a compact TSOP-6 package. Ensure the operating voltage does not exceed the -20 V limit and that the thermal design accommodates the specified power dissipation. Verify that the gate drive voltage aligns with the specified RDS(on) test conditions for optimal performance.

Part Context

This part belongs to the SQ series of TrenchFET MOSFETs designed by Vishay Siliconix. The 'EV' designation typically indicates enhanced automotive qualification, while the '-GE3' suffix denotes lead-free and halogen-free construction compliant with RoHS directives. It is distinct from non-automotive variants within the same family.